N-Channel Power MOSFET, 1000V Vds, 3.1A Continuous Drain Current, 5 Ohm Rds On. Features 125W Max Power Dissipation, 29ns Fall Time, 89ns Turn-Off Delay, and 12ns Turn-On Delay. Operates from -55°C to 150°C with 980pF Input Capacitance. Packaged in TO-247-3 for through-hole mounting.
PackageTO-247-3
Current Rating3.1A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFPG30 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
3.1A
Current Rating
3.1A
Drain to Source Breakdown Voltage
1kV
Drain to Source Resistance
5R
Drain to Source Voltage (Vdss)
1kV
Fall Time
29ns
Gate to Source Voltage (Vgs)
20V
Height
20.7mm
Input Capacitance
980pF
Lead Free
Contains Lead
Length
15.87mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Number of Channels
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
125W
Rds On Max
5R
RoHS Compliant
No
Turn-Off Delay Time
89ns
Turn-On Delay Time
12ns
DC Rated Voltage
1kV
Weight
1.340411oz
Width
5.31mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFPG30 Datasheet
Download the complete datasheet for Vishay IRFPG30 to view detailed technical specifications.
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