N-channel power MOSFET with 1kV drain-source voltage and 6.1A continuous drain current. Features low 2 Ohm drain-source on-resistance and 190W power dissipation. Operates across a wide temperature range from -55°C to 150°C. Packaged in a TO-247-3 through-hole mount with a 3-pin configuration. Includes fast switching characteristics with turn-on delay of 19ns and fall time of 36ns.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power190W
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Technical Specifications
Vishay IRFPG50 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
6.1A
Drain to Source Resistance
2R
Drain to Source Voltage (Vdss)
1kV
Fall Time
36ns
Gate to Source Voltage (Vgs)
20V
Height
20.7mm
Input Capacitance
2.8nF
Length
15.87mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
190W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
190W
Radiation Hardening
No
Rds On Max
2R
RoHS Compliant
No
Turn-Off Delay Time
130ns
Turn-On Delay Time
19ns
DC Rated Voltage
1kV
Weight
1.340411oz
Width
5.31mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFPG50 Datasheet
Download the complete datasheet for Vishay IRFPG50 to view detailed technical specifications.
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