N-channel power MOSFET with 1000V drain-source breakdown voltage and 6.1A continuous drain current. Features 2 Ohm drain-source on-resistance and 190W maximum power dissipation. Operates within a temperature range of -55°C to 150°C. Packaged in a TO-247AC through-hole mount, this silicon metal-oxide semiconductor FET is RoHS compliant. Includes input capacitance of 2.8nF and fall time of 36ns.
PackageTO-247AC
Current Rating6.1A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFPG50PBF technical specifications.
General
Package/Case
TO-247AC
Continuous Drain Current (ID)
6.1A
Current Rating
6.1A
Drain to Source Breakdown Voltage
1kV
Drain to Source Resistance
2R
Drain to Source Voltage (Vdss)
1kV
Drain-source On Resistance-Max
2R
Fall Time
36ns
Gate to Source Voltage (Vgs)
20V
Height
20.7mm
Input Capacitance
2.8nF
Lead Free
Lead Free
Length
15.87mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
190W
Mount
Through Hole
Nominal Vgs
4V
Number of Channels
1
Number of Elements
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
190W
Radiation Hardening
No
Rds On Max
2R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
IRF/SIHFPG50
Threshold Voltage
4V
Turn-Off Delay Time
130ns
Turn-On Delay Time
19ns
DC Rated Voltage
1kV
Weight
1.340411oz
Width
5.31mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFPG50PBF Datasheet
Download the complete datasheet for Vishay IRFPG50PBF to view detailed technical specifications.
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