N-channel power MOSFET with 1000V drain-source breakdown voltage and 6.1A continuous drain current. Features 2 Ohm drain-source on-resistance and 190W maximum power dissipation. Operates within a temperature range of -55°C to 150°C. Packaged in a TO-247AC through-hole mount, this silicon metal-oxide semiconductor FET is RoHS compliant. Includes input capacitance of 2.8nF and fall time of 36ns.
PackageTO-247AC
Current Rating6.1A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFPG50PBF technical specifications.
General
| Package/Case | TO-247AC |
| Continuous Drain Current (ID) | 6.1A |
| Current Rating | 6.1A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 2R |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 2.8nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 190W |
| Radiation Hardening | No |
| Rds On Max | 2R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | IRF/SIHFPG50 |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 130ns |
| Turn-On Delay Time | 19ns |
| DC Rated Voltage | 1kV |
| Weight | 1.340411oz |
| Width | 5.31mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFPG50PBF Datasheet
Download the complete datasheet for Vishay IRFPG50PBF to view detailed technical specifications.
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