
N-channel power MOSFET featuring 500V drain-source voltage and 36A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 0.13 ohm drain-source resistance. Designed for through-hole mounting in a SUPER-247 package, it boasts a maximum power dissipation of 446W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 23ns turn-on delay and 52ns turn-off delay.
Vishay IRFPS37N50A technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 36A |
| Current Rating | 36A |
| Drain to Source Resistance | 130mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 80ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.8mm |
| Input Capacitance | 5.579nF |
| Lead Free | Contains Lead |
| Length | 16.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 446W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 130mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 52ns |
| Turn-On Delay Time | 23ns |
| DC Rated Voltage | 500V |
| Weight | 1.340411oz |
| Width | 5.3mm |
| RoHS | Not Compliant |
Download the complete datasheet for Vishay IRFPS37N50A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
