N-channel power MOSFET featuring 500V drain-source voltage and 36A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 0.13 ohm drain-source resistance. Designed for through-hole mounting in a SUPER-247 package, it boasts a maximum power dissipation of 446W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 23ns turn-on delay and 52ns turn-off delay.
PackageTO-247-3
Current Rating36A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFPS37N50A technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
36A
Current Rating
36A
Drain to Source Resistance
130mR
Drain to Source Voltage (Vdss)
500V
Fall Time
80ns
Gate to Source Voltage (Vgs)
30V
Height
20.8mm
Input Capacitance
5.579nF
Lead Free
Contains Lead
Length
16.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
446W
Mount
Through Hole
Number of Channels
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
130mR
RoHS Compliant
No
Turn-Off Delay Time
52ns
Turn-On Delay Time
23ns
DC Rated Voltage
500V
Weight
1.340411oz
Width
5.3mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFPS37N50A Datasheet
Download the complete datasheet for Vishay IRFPS37N50A to view detailed technical specifications.
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