N-Channel Power MOSFET featuring 500V Drain-Source Voltage (Vdss) and 36A Continuous Drain Current (ID). This silicon, metal-oxide semiconductor FET offers a low 130mΩ Drain-Source On Resistance (Rds On Max) and a maximum power dissipation of 446W. Designed for through-hole mounting in a SUPER-247 package, it operates within a temperature range of -55°C to 150°C and includes fast switching characteristics with turn-on delay at 23ns and fall time at 80ns. RoHS compliant.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power446W
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Technical Specifications
Vishay IRFPS37N50APBF technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
36A
Drain to Source Breakdown Voltage
400V
Drain to Source Resistance
130mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
130mR
Fall Time
80ns
Gate to Source Voltage (Vgs)
30V
Height
20.8mm
Input Capacitance
5.579nF
Lead Free
Lead Free
Length
16.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
446W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
25
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
446W
Radiation Hardening
No
Rds On Max
130mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
52ns
Turn-On Delay Time
23ns
Weight
1.340411oz
Width
5.3mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFPS37N50APBF Datasheet
Download the complete datasheet for Vishay IRFPS37N50APBF to view detailed technical specifications.
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