
N-channel Silicon Metal-oxide Semiconductor FET, 600V drain-source voltage, 38A continuous drain current, and 150mΩ maximum drain-source on-resistance. This through-hole mounted power MOSFET features a 5V threshold voltage, 7.99nF input capacitance, and 540W maximum power dissipation. Operating temperature range spans from -55°C to 150°C. Turn-on delay is 44ns and fall time is 69ns.
Vishay IRFPS38N60LPBF technical specifications.
| Package/Case | TO-274-3 |
| Continuous Drain Current (ID) | 38A |
| Drain to Source Resistance | 120mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 150MR |
| Fall Time | 69ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.3mm |
| Input Capacitance | 7.99nF |
| Lead Free | Lead Free |
| Length | 15.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 540W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 150mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 92ns |
| Turn-On Delay Time | 44ns |
| Width | 5mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay IRFPS38N60LPBF to view detailed technical specifications.
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