N-Channel Power MOSFET, 600V Vdss, 40A Continuous Drain Current (ID), and 0.13ohm Rds On. This silicon Metal-oxide Semiconductor FET features a SUPER-247 package with through-hole mounting. Key specifications include a maximum power dissipation of 570W, input capacitance of 7.97nF, and switching times including a 47ns turn-on delay and 60ns fall time. Operating temperature range is -55°C to 150°C.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power570W
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Technical Specifications
Vishay IRFPS40N60K technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
40A
Drain to Source Resistance
130mR
Drain to Source Voltage (Vdss)
600V
Fall Time
60ns
Gate to Source Voltage (Vgs)
30V
Height
20.8mm
Input Capacitance
7.97nF
Length
16.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
570W
Mount
Through Hole
Number of Channels
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
570W
Radiation Hardening
No
Rds On Max
130mR
RoHS Compliant
No
Turn-Off Delay Time
97ns
Turn-On Delay Time
47ns
Weight
1.340411oz
Width
5.3mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFPS40N60K Datasheet
Download the complete datasheet for Vishay IRFPS40N60K to view detailed technical specifications.
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