N-Channel Power MOSFET, 600V Vdss, 40A Continuous Drain Current (ID), and 0.13ohm Rds On. This silicon Metal-oxide Semiconductor FET features a SUPER-247 package with through-hole mounting. Key specifications include a maximum power dissipation of 570W, input capacitance of 7.97nF, and switching times including a 47ns turn-on delay and 60ns fall time. Operating temperature range is -55°C to 150°C.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power570W
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Technical Specifications
Vishay IRFPS40N60K technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Resistance | 130mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.8mm |
| Input Capacitance | 7.97nF |
| Length | 16.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 570W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 570W |
| Radiation Hardening | No |
| Rds On Max | 130mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 97ns |
| Turn-On Delay Time | 47ns |
| Weight | 1.340411oz |
| Width | 5.3mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay IRFPS40N60K Datasheet
Download the complete datasheet for Vishay IRFPS40N60K to view detailed technical specifications.
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