N-Channel Power MOSFET featuring 500V drain-source voltage and 47A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.09ohm drain-source on-resistance and 540W maximum power dissipation. Designed for through-hole mounting in a TO-247-3 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 25ns turn-on delay and 74ns fall time.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power540W
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Technical Specifications
Vishay IRFPS43N50KPBF technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 47A |
| Drain to Source Resistance | 78mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 78mR |
| Fall Time | 74ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.8mm |
| Input Capacitance | 8.31nF |
| Length | 16.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 540W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 540W |
| Radiation Hardening | No |
| Rds On Max | 90mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | 500V |
| Weight | 1.340411oz |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFPS43N50KPBF Datasheet
Download the complete datasheet for Vishay IRFPS43N50KPBF to view detailed technical specifications.
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