N-Channel Power MOSFET featuring 500V drain-source voltage and 47A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.09ohm drain-source on-resistance and 540W maximum power dissipation. Designed for through-hole mounting in a TO-247-3 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 25ns turn-on delay and 74ns fall time.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power540W
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Technical Specifications
Vishay IRFPS43N50KPBF technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
47A
Drain to Source Resistance
78mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
78mR
Fall Time
74ns
Gate to Source Voltage (Vgs)
30V
Height
20.8mm
Input Capacitance
8.31nF
Length
16.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
540W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
25
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
540W
Radiation Hardening
No
Rds On Max
90mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
5V
Turn-Off Delay Time
55ns
Turn-On Delay Time
25ns
DC Rated Voltage
500V
Weight
1.340411oz
Width
5.3mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFPS43N50KPBF Datasheet
Download the complete datasheet for Vishay IRFPS43N50KPBF to view detailed technical specifications.
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