Vishay
IRFR010TRL
Power Field-Effect Transistor, 8.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFR010TRL technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
8.2A
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
50V
Fall Time
19ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
250pF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
200mR
RoHS Compliant
No
Turn-Off Delay Time
13ns
Turn-On Delay Time
10ns
Weight
0.050717oz
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFR010TRL Datasheet
Download the complete datasheet for Vishay IRFR010TRL to view detailed technical specifications.
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