N-channel power MOSFET featuring 60V drain-source voltage and 7.7A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.2-ohm drain-to-source resistance. Designed for surface mounting in a TO-252 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 25W. Key switching characteristics include a 10ns turn-on delay and 19ns fall time.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFR014TRL technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
7.7A
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
60V
Fall Time
19ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
300pF
Lead Free
Contains Lead
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
200mR
RoHS Compliant
No
Turn-Off Delay Time
13ns
Turn-On Delay Time
10ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFR014TRL Datasheet
Download the complete datasheet for Vishay IRFR014TRL to view detailed technical specifications.
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