N-Channel Power MOSFET, 60V Vdss, 14A Continuous Drain Current, and 100mΩ Max Drain-Source On-Resistance. This silicon, metal-oxide semiconductor FET features a TO-252-3 (DPAK-3) surface mount package, 2.5W power dissipation, and a maximum operating temperature of 150°C. Key switching characteristics include a 13ns turn-on delay, 25ns turn-off delay, and 42ns fall time, with an input capacitance of 640pF. The component is RoHS compliant and supplied on tape and reel.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
Quick Jump:
Technical Specifications
Vishay IRFR020TRPBF technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
14A
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
100mR
Fall Time
42ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
640pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
100mR
RoHS Compliant
Yes
Turn-Off Delay Time
25ns
Turn-On Delay Time
13ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFR020TRPBF Datasheet
Download the complete datasheet for Vishay IRFR020TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.