N-Channel Power MOSFET, 60V Vds, 14A Continuous Drain Current (ID), and 0.1Ω Rds On. This silicon Metal-oxide Semiconductor FET features a TO-252AA (DPAK-3) surface mount package. Key electrical characteristics include a 20V Gate to Source Voltage (Vgs), 640pF input capacitance, and a maximum power dissipation of 42W. Operating temperature range is -55°C to 150°C.
PackageTO-252-3
Current Rating14A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFR024 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
14A
Current Rating
14A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
60V
Fall Time
42ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
640pF
Lead Free
Contains Lead
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Mount
Surface Mount
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
100mR
RoHS Compliant
No
Turn-Off Delay Time
25ns
Turn-On Delay Time
13ns
DC Rated Voltage
60V
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFR024 Datasheet
Download the complete datasheet for Vishay IRFR024 to view detailed technical specifications.
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