N-channel power MOSFET featuring 60V drain-source voltage and 14A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 100mΩ drain-source resistance and is designed for surface mounting in a TO-252-3 package. Key switching characteristics include a 13ns turn-on delay and 25ns turn-off delay, with a 42ns fall time. Maximum power dissipation is 2.5W, operating across a temperature range of -55°C to 150°C.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFR024TRLPBF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 42ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 640pF |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 13ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFR024TRLPBF Datasheet
Download the complete datasheet for Vishay IRFR024TRLPBF to view detailed technical specifications.
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