
N-Channel Power MOSFET, 60V Drain-Source Voltage, 14A Continuous Drain Current, and 100mΩ Max Drain-Source On-Resistance. Features a 2.5W Max Power Dissipation, 640pF Input Capacitance, and 42ns Fall Time. Designed for surface mounting in a DPAK package, this silicon Metal-oxide Semiconductor FET operates from -55°C to 150°C and is RoHS compliant.
Vishay IRFR024TRPBF technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 100mR |
| Fall Time | 42ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 640pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 13ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay IRFR024TRPBF to view detailed technical specifications.
No datasheet is available for this part.
