N-Channel Power MOSFET, 60V Drain-Source Voltage, 14A Continuous Drain Current, and 100mΩ Max Drain-Source On-Resistance. Features a 2.5W Max Power Dissipation, 640pF Input Capacitance, and 42ns Fall Time. Designed for surface mounting in a DPAK package, this silicon Metal-oxide Semiconductor FET operates from -55°C to 150°C and is RoHS compliant.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Vishay IRFR024TRPBF technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
14A
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
100mR
Fall Time
42ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
640pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
2V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
100mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
25ns
Turn-On Delay Time
13ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFR024TRPBF Datasheet
Download the complete datasheet for Vishay IRFR024TRPBF to view detailed technical specifications.
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