N-Channel Power MOSFET, 100V Drain-Source Voltage, 4.3A Continuous Drain Current, and 0.54 Ohm Drain-Source On-Resistance. This silicon Metal-Oxide Semiconductor FET features a TO-252AA package for surface mounting, with a maximum power dissipation of 25W. It offers fast switching speeds with a turn-on delay of 6.9ns and a fall time of 9.4ns. Operating temperature range is -55°C to 150°C.
PackageTO-252-3
Current Rating4.3A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFR110TR technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
4.3A
Current Rating
4.3A
Drain to Source Resistance
540mR
Drain to Source Voltage (Vdss)
100V
Fall Time
9.4ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
180pF
Lead Free
Contains Lead
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
540mR
RoHS Compliant
No
Turn-Off Delay Time
15ns
Turn-On Delay Time
6.9ns
DC Rated Voltage
100V
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFR110TR Datasheet
Download the complete datasheet for Vishay IRFR110TR to view detailed technical specifications.
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