N-Channel Power MOSFET, 100V Drain-Source Voltage (Vdss) and 4.3A Continuous Drain Current (ID). Features 540mΩ Drain-Source On-Resistance (Rds On) and 25W Max Power Dissipation. This silicon Metal-Oxide Semiconductor FET is housed in a TO-252-3 (DPAK-3) surface-mount package. Operates from -55°C to 150°C with a 20V Gate-Source Voltage (Vgs) rating. RoHS compliant and supplied in tape and reel packaging.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFR110TRRPBF technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
4.3A
Drain to Source Resistance
540mR
Drain to Source Voltage (Vdss)
100V
Fall Time
9.4ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
180pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
540mR
RoHS Compliant
Yes
Turn-Off Delay Time
15ns
Turn-On Delay Time
6.9ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFR110TRRPBF Datasheet
Download the complete datasheet for Vishay IRFR110TRRPBF to view detailed technical specifications.
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