N-Channel Power MOSFET, 100V Drain-Source Voltage (Vdss) and 7.7A Continuous Drain Current (ID). Features 0.27ohm Drain-to-Source Resistance (Rds On Max) and 42W Max Power Dissipation. This silicon Metal-oxide Semiconductor FET is housed in a TO-252AA (DPAK-3) surface-mount package. Operates from -55°C to 150°C with a Gate-to-Source Voltage (Vgs) of 20V.
PackageTO-252-3
Voltage100V
Current77A
MountingSurface Mount
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Technical Specifications
Vishay IRFR120 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
7.7A
Current
77A
Drain to Source Resistance
270mR
Drain to Source Voltage (Vdss)
100V
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
360pF
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Mount
Surface Mount
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
270mR
RoHS Compliant
No
Turn-Off Delay Time
18ns
Turn-On Delay Time
6.8ns
Voltage
100V
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFR120 Datasheet
Download the complete datasheet for Vishay IRFR120 to view detailed technical specifications.
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