N-Channel Power MOSFET, 100V Drain-Source Voltage (Vdss) and 7.7A Continuous Drain Current (ID). Features 0.27ohm Drain-to-Source Resistance (Rds On Max) and 42W Max Power Dissipation. This silicon Metal-oxide Semiconductor FET is housed in a TO-252AA (DPAK-3) surface-mount package. Operates from -55°C to 150°C with a Gate-to-Source Voltage (Vgs) of 20V.
PackageTO-252-3
Voltage100V
Current77A
MountingSurface Mount
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Technical Specifications
Vishay IRFR120 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 7.7A |
| Current | 77A |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 360pF |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 270mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 6.8ns |
| Voltage | 100V |
| Weight | 0.050717oz |
| Width | 6.22mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRFR120 Datasheet
Download the complete datasheet for Vishay IRFR120 to view detailed technical specifications.
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