N-Channel Power MOSFET, 100V Drain-Source Voltage (Vdss) and 7.7A Continuous Drain Current (ID). Features a low 270mΩ Drain-Source On-Resistance (Rds On Max) and operates within a -55°C to 150°C temperature range. This silicon Metal-oxide Semiconductor FET is housed in a TO-252-3 surface-mount package, offering fast switching speeds with turn-on delay of 6.8ns and fall time of 17ns. RoHS compliant and packaged on tape and reel.
PackageTO-252-3
Resistance270MR
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFR120TRLPBF technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
7.7A
Drain to Source Resistance
270mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
270MR
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
360pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
270mR
Resistance
270MR
RoHS Compliant
Yes
Turn-Off Delay Time
18ns
Turn-On Delay Time
6.8ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFR120TRLPBF Datasheet
Download the complete datasheet for Vishay IRFR120TRLPBF to view detailed technical specifications.
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