
N-Channel Power MOSFET, 100V Drain-Source Voltage (Vdss) and 7.7A Continuous Drain Current (ID). Features a low 270mΩ Drain-Source On-Resistance (Rds On Max) and operates within a -55°C to 150°C temperature range. This silicon Metal-oxide Semiconductor FET is housed in a TO-252-3 surface-mount package, offering fast switching speeds with turn-on delay of 6.8ns and fall time of 17ns. RoHS compliant and packaged on tape and reel.
Vishay IRFR120TRLPBF technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 7.7A |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 270MR |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 360pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 270mR |
| Resistance | 270MR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 6.8ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay IRFR120TRLPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.