N-channel power MOSFET featuring 100V drain-source voltage and 7.7A continuous drain current. Offers a low 270mΩ drain-source on-resistance and 42W maximum power dissipation. This silicon metal-oxide semiconductor field-effect transistor is designed for surface mounting in a TO-252-3 package, with fast switching characteristics including a 6.8ns turn-on delay and 17ns fall time. Operating temperature range spans from -55°C to 150°C.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFR120TRR technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
7.7A
Drain to Source Resistance
270mR
Drain to Source Voltage (Vdss)
100V
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
360pF
Lead Free
Contains Lead
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
270mR
RoHS Compliant
No
Turn-Off Delay Time
18ns
Turn-On Delay Time
6.8ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFR120TRR Datasheet
Download the complete datasheet for Vishay IRFR120TRR to view detailed technical specifications.
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