N-channel power MOSFET with 100V drain-source voltage and 7.7A continuous drain current. Features 0.27 ohm drain-source resistance and 42W maximum power dissipation. This silicon, metal-oxide semiconductor FET is housed in a TO-252-3 surface-mount package, offering fast switching with turn-on delay of 6.8ns and fall time of 17ns. Operating temperature range is -55°C to 150°C, and it is RoHS compliant.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFR120TRRPBF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 7.7A |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 360pF |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 270mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 6.8ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFR120TRRPBF Datasheet
Download the complete datasheet for Vishay IRFR120TRRPBF to view detailed technical specifications.
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