N-channel power MOSFET featuring 600V drain-source voltage and 1.4A continuous drain current. Offers 7 ohm drain-to-source resistance (Rds On Max) and a maximum power dissipation of 36W. Designed for surface mounting in a TO-252 DPAK package, this silicon metal-oxide semiconductor FET operates across a temperature range of -55°C to 150°C. Key switching characteristics include a turn-on delay time of 9.8ns and a fall time of 20ns.
PackageTO-252-3
Current Rating1.4A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFR1N60A technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
1.4A
Current Rating
1.4A
Drain to Source Resistance
7R
Drain to Source Voltage (Vdss)
600V
Fall Time
20ns
Gate to Source Voltage (Vgs)
30V
Height
2.39mm
Input Capacitance
229pF
Lead Free
Contains Lead
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
36W
Mount
Surface Mount
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
7R
RoHS Compliant
No
Turn-Off Delay Time
18ns
Turn-On Delay Time
9.8ns
DC Rated Voltage
600V
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFR1N60A Datasheet
Download the complete datasheet for Vishay IRFR1N60A to view detailed technical specifications.
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