IRFR1N60APBF

N-Channel Power MOSFET, 600V Drain-Source Voltage, 1.4A Continuous Drain Current, and 7 Ohm Drain-Source On-Resistance. This silicon, metal-oxide semiconductor FET features a DPAK surface-mount package with a maximum power dissipation of 36W. Key specifications include a 30V Gate-to-Source Voltage, 229pF input capacitance, and fast switching times with a 9.8ns turn-on delay and 18ns turn-off delay. The component operates within a temperature range of -55°C to 150°C and is RoHS compliant.