N-channel power MOSFET featuring 600V drain-source voltage and 1.4A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 7-ohm drain-source on-resistance. Designed for surface mounting in a TO-252 package, it exhibits fast switching characteristics with turn-on delay of 9.8ns and fall time of 20ns. Maximum power dissipation is 36W, with an operating temperature range of -55°C to 150°C.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFR1N60ATR technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
1.4A
Drain to Source Resistance
7R
Drain to Source Voltage (Vdss)
600V
Fall Time
20ns
Gate to Source Voltage (Vgs)
30V
Height
2.39mm
Input Capacitance
229pF
Lead Free
Contains Lead
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
36W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
7R
RoHS Compliant
No
Turn-Off Delay Time
18ns
Turn-On Delay Time
9.8ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFR1N60ATR Datasheet
Download the complete datasheet for Vishay IRFR1N60ATR to view detailed technical specifications.
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