N-channel power MOSFET featuring 600V drain-source voltage and 1.4A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 7-ohm drain-source on-resistance. Designed for surface mounting in a TO-252 package, it exhibits fast switching characteristics with turn-on delay of 9.8ns and fall time of 20ns. Maximum power dissipation is 36W, with an operating temperature range of -55°C to 150°C.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRFR1N60ATR technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 1.4A |
| Drain to Source Resistance | 7R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.39mm |
| Input Capacitance | 229pF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 36W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 7R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 9.8ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay IRFR1N60ATR Datasheet
Download the complete datasheet for Vishay IRFR1N60ATR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.