N-Channel Power MOSFET, 600V Vds, 1.4A continuous drain current, and 7 Ohm Rds On. This silicon, metal-oxide semiconductor FET features a TO-252 package for surface mounting, with a maximum power dissipation of 36W and operating temperatures from -55°C to 150°C. Key switching parameters include a 9.8ns turn-on delay, 18ns turn-off delay, and 20ns fall time, with an input capacitance of 229pF. The component is RoHS compliant and supplied in tape and reel packaging.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power36W
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Technical Specifications
Vishay IRFR1N60ATRRPBF technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
1.4A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
7R
Drain to Source Voltage (Vdss)
600V
Fall Time
20ns
Gate to Source Voltage (Vgs)
30V
Height
2.39mm
Input Capacitance
229pF
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
36W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
36W
Radiation Hardening
No
Rds On Max
7R
RoHS Compliant
Yes
Turn-Off Delay Time
18ns
Turn-On Delay Time
9.8ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFR1N60ATRRPBF Datasheet
Download the complete datasheet for Vishay IRFR1N60ATRRPBF to view detailed technical specifications.
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