N-Channel Power MOSFET, 600V Vds, 1.4A continuous drain current, and 7 Ohm Rds On. This silicon, metal-oxide semiconductor FET features a TO-252 package for surface mounting, with a maximum power dissipation of 36W and operating temperatures from -55°C to 150°C. Key switching parameters include a 9.8ns turn-on delay, 18ns turn-off delay, and 20ns fall time, with an input capacitance of 229pF. The component is RoHS compliant and supplied in tape and reel packaging.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power36W
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Technical Specifications
Vishay IRFR1N60ATRRPBF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 1.4A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 7R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.39mm |
| Input Capacitance | 229pF |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 36W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 36W |
| Radiation Hardening | No |
| Rds On Max | 7R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 9.8ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFR1N60ATRRPBF Datasheet
Download the complete datasheet for Vishay IRFR1N60ATRRPBF to view detailed technical specifications.
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