N-Channel Power MOSFET, 200V Drain-Source Voltage, 2.6A Continuous Drain Current, and 1.5 Ohm Drain-Source Resistance. Features include 8.2ns turn-on delay, 8.9ns fall time, and 14ns turn-off delay. This silicon Metal-Oxide Semiconductor FET operates from -55°C to 150°C with a maximum power dissipation of 25W. Packaged in a TO-252-3 (DPAK-3) surface-mount case, it offers 140pF input capacitance and a 20V gate-source voltage rating.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFR210 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
2.6A
Drain to Source Resistance
1.5R
Drain to Source Voltage (Vdss)
200V
Fall Time
8.9ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
140pF
Lead Free
Contains Lead
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Surface Mount
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
1.5R
RoHS Compliant
No
Turn-Off Delay Time
14ns
Turn-On Delay Time
8.2ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFR210 Datasheet
Download the complete datasheet for Vishay IRFR210 to view detailed technical specifications.
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