N-Channel Power MOSFET, featuring a 200V drain-to-source voltage (Vdss) and a continuous drain current (ID) of 2.6A. This silicon Metal-oxide Semiconductor FET offers a low drain-to-source resistance (Rds On) of 1.5 ohms. Designed for surface mounting in a TO-252-3 (DPAK) package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 25W. Key switching characteristics include a turn-on delay time of 8.2ns and a fall time of 8.9ns.
PackageTO-252-3
Current Rating2.6A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFR210TR technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
2.6A
Current Rating
2.6A
Drain to Source Resistance
1.5R
Drain to Source Voltage (Vdss)
200V
Fall Time
8.9ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
140pF
Lead Free
Contains Lead
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
1.5R
RoHS Compliant
No
Turn-Off Delay Time
14ns
Turn-On Delay Time
8.2ns
DC Rated Voltage
200V
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFR210TR Datasheet
Download the complete datasheet for Vishay IRFR210TR to view detailed technical specifications.
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