N-Channel Power MOSFET, 200V Drain-Source Voltage, 2.6A Continuous Drain Current, and 1.5Ω Drain-Source Resistance. This silicon Metal-Oxide Semiconductor FET features a TO-252-3 (DPAK) surface-mount package, ideal for applications requiring up to 25W power dissipation. Key switching characteristics include an 8.2ns turn-on delay and an 8.9ns fall time, with a maximum operating temperature of 150°C.
PackageTO-252-3
Current Rating2.6A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFR210TRL technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
2.6A
Current Rating
2.6A
Drain to Source Resistance
1.5R
Drain to Source Voltage (Vdss)
200V
Fall Time
8.9ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
140pF
Lead Free
Contains Lead
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
1.5R
RoHS Compliant
No
Turn-Off Delay Time
14ns
Turn-On Delay Time
8.2ns
DC Rated Voltage
200V
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFR210TRL Datasheet
Download the complete datasheet for Vishay IRFR210TRL to view detailed technical specifications.
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