N-channel power MOSFET featuring 250V drain-source breakdown voltage and 2.2A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 2-ohm drain-source resistance (Rds On Max) and 4V threshold voltage. Designed for surface mounting in a DPAK package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 25W. Key switching characteristics include a 7ns turn-on delay and 7ns fall time.
PackageDPAK
Current Rating2.2A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRFR214PBF technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
2.2A
Current Rating
2.2A
Drain to Source Breakdown Voltage
250V
Drain to Source Resistance
2R
Drain to Source Voltage (Vdss)
250V
Fall Time
7ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
140pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
25W
Radiation Hardening
No
Rds On Max
2R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
16ns
Turn-On Delay Time
7ns
DC Rated Voltage
250V
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFR214PBF Datasheet
Download the complete datasheet for Vishay IRFR214PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
