N-Channel Power MOSFET, featuring a 250V Drain-Source Voltage (Vdss) and 2.2A Continuous Drain Current (ID). This silicon Metal-Oxide-Semiconductor FET offers a low 2-ohm Drain-to-Source Resistance (Rds On Max) and a maximum power dissipation of 2.5W. Designed for surface mounting in a TO-252-3 package, it boasts fast switching speeds with a 7ns turn-on delay and 7ns fall time. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is supplied on tape and reel.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Vishay IRFR214TRLPBF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 140pF |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 2R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 7ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFR214TRLPBF Datasheet
Download the complete datasheet for Vishay IRFR214TRLPBF to view detailed technical specifications.
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