IRFR224TRPBF

N-Channel Power MOSFET, 250V Vdss, 3.8A Continuous Drain Current (ID), and 1.1 Ohm Rds On Max. This silicon Metal-oxide Semiconductor FET features a TO-252-3 (DPAK-3) surface mount package, ideal for applications requiring efficient switching. Key electrical characteristics include a 4V threshold voltage, 260pF input capacitance, and fast switching times with a 7ns turn-on delay and 12ns fall time. Operating across a wide temperature range from -55°C to 150°C, this component offers a maximum power dissipation of 2.5W and is RoHS compliant.