N-Channel Power MOSFET, 400V Vdss, 1.7A Continuous Drain Current (ID), and 3.6 Ohm Rds On. This single-element silicon Metal-Oxide-Semiconductor FET features a TO-252 DPAK-3 surface-mount package. Key electrical characteristics include a 20V Gate to Source Voltage (Vgs), 170pF input capacitance, 7.9ns turn-on delay, and 21ns turn-off delay. Maximum power dissipation is 25W, with operating temperatures ranging from -55°C to 150°C.
PackageTO-252-3
Current Rating1.7A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRFR310 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
1.7A
Current Rating
1.7A
Drain to Source Resistance
3.6R
Drain to Source Voltage (Vdss)
400V
Fall Time
11ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
170pF
Lead Free
Contains Lead
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Surface Mount
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
25W
Rds On Max
3.6R
RoHS Compliant
No
Turn-Off Delay Time
21ns
Turn-On Delay Time
7.9ns
DC Rated Voltage
400V
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFR310 Datasheet
Download the complete datasheet for Vishay IRFR310 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.