
N-Channel Power MOSFET, 400V Vdss, 1.7A Continuous Drain Current (ID), and 3.6 Ohm Rds On. This single-element silicon Metal-Oxide-Semiconductor FET features a TO-252 DPAK-3 surface-mount package. Key electrical characteristics include a 20V Gate to Source Voltage (Vgs), 170pF input capacitance, 7.9ns turn-on delay, and 21ns turn-off delay. Maximum power dissipation is 25W, with operating temperatures ranging from -55°C to 150°C.
Vishay IRFR310 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 1.7A |
| Current Rating | 1.7A |
| Drain to Source Resistance | 3.6R |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 170pF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 25W |
| Rds On Max | 3.6R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 7.9ns |
| DC Rated Voltage | 400V |
| Weight | 0.050717oz |
| Width | 6.22mm |
| RoHS | Not Compliant |
Download the complete datasheet for Vishay IRFR310 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.