N-channel power MOSFET featuring 400V drain-source voltage and 1.7A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 3.6-ohm drain-source resistance. Designed for surface mounting in a TO-252-3 package, it boasts a maximum power dissipation of 25W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 7.9ns turn-on delay and 11ns fall time.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRFR310TR technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
1.7A
Drain to Source Resistance
3.6R
Drain to Source Voltage (Vdss)
400V
Fall Time
11ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
170pF
Lead Free
Contains Lead
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
3.6R
RoHS Compliant
No
Turn-Off Delay Time
21ns
Turn-On Delay Time
7.9ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFR310TR Datasheet
Download the complete datasheet for Vishay IRFR310TR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.