N-Channel Power MOSFET, 400V Drain-Source Voltage, 1.7A Continuous Drain Current, and 3.6 Ohm Drain-Source On-Resistance. Features a 20V Gate-to-Source Voltage, 170pF Input Capacitance, and 2.5W Max Power Dissipation. This silicon Metal-oxide Semiconductor FET is designed for surface mounting in a DPAK package, offering fast switching with a 7.9ns turn-on delay and 11ns fall time. Operates from -55°C to 150°C and is RoHS compliant.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Vishay IRFR310TRPBF technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 1.7A |
| Drain to Source Resistance | 3.6R |
| Drain to Source Voltage (Vdss) | 400V |
| Drain-source On Resistance-Max | 3.6R |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 170pF |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 3.6R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 7.9ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFR310TRPBF Datasheet
Download the complete datasheet for Vishay IRFR310TRPBF to view detailed technical specifications.
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