N-Channel Power MOSFET, 400V Vds, 3.1A Continuous Drain Current, 1.8 Ohm Rds On. This silicon Metal-oxide Semiconductor FET features a TO-252-3 package for surface mounting, with a maximum power dissipation of 42W. Operating temperature range is -55°C to 150°C, and it includes a 1-element configuration. Key switching parameters include a 10ns turn-on delay and 13ns fall time.
PackageTO-252-3
Current Rating3.1A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFR320 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
3.1A
Current Rating
3.1A
Drain to Source Breakdown Voltage
400V
Drain to Source Resistance
1.8R
Drain to Source Voltage (Vdss)
400V
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
350pF
Lead Free
Contains Lead
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Mount
Surface Mount
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
42W
Rds On Max
1.8R
RoHS Compliant
No
Turn-Off Delay Time
30ns
Turn-On Delay Time
10ns
DC Rated Voltage
400V
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFR320 Datasheet
Download the complete datasheet for Vishay IRFR320 to view detailed technical specifications.
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