N-Channel Power MOSFET with 400V Drain-Source Voltage (Vdss) and 3.1A Continuous Drain Current (ID). Features 1.8 Ohm maximum Drain-Source On Resistance (Rds On) and 42W maximum power dissipation. This silicon Metal-oxide Semiconductor FET is housed in a TO-252 (DPAK-3) surface-mount package. Operates from -55°C to 150°C with a 20V Gate-Source Voltage (Vgs) rating. Includes 10ns turn-on delay and 30ns turn-off delay.
PackageTO-252-3
Current Rating3.1A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFR320TR technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
3.1A
Current Rating
3.1A
Drain to Source Resistance
1.8R
Drain to Source Voltage (Vdss)
400V
Drain-source On Resistance-Max
1.8R
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
350pF
Lead Free
Contains Lead
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
1.8R
RoHS Compliant
No
Turn-Off Delay Time
30ns
Turn-On Delay Time
10ns
DC Rated Voltage
400V
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFR320TR Datasheet
Download the complete datasheet for Vishay IRFR320TR to view detailed technical specifications.
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