N-Channel Power MOSFET, 400V Drain-Source Voltage (Vdss) and 3.1A Continuous Drain Current (ID). Features 1.8 Ohm maximum Drain-Source On-Resistance (Rds On) and 42W maximum power dissipation. This silicon Metal-oxide Semiconductor FET is housed in a TO-252-3 surface-mount package. Offers fast switching with 10ns turn-on delay and 30ns turn-off delay. Operating temperature range from -55°C to 150°C.
PackageTO-252-3
Current Rating3.1A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFR320TRL technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
3.1A
Current Rating
3.1A
Drain to Source Resistance
1.8R
Drain to Source Voltage (Vdss)
400V
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
350pF
Lead Free
Contains Lead
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
1.8R
RoHS Compliant
No
Turn-Off Delay Time
30ns
Turn-On Delay Time
10ns
DC Rated Voltage
400V
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFR320TRL Datasheet
Download the complete datasheet for Vishay IRFR320TRL to view detailed technical specifications.
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