N-Channel Power MOSFET, DPAK package, featuring a 400V drain-source voltage (Vdss) and 3.1A continuous drain current (ID). This silicon Metal-oxide Semiconductor FET offers a low drain-source on-resistance of 1.8 Ohms. With a threshold voltage of 4V and a gate-source voltage rating of 20V, it exhibits fast switching characteristics with turn-on delay of 10ns and fall time of 13ns. Maximum power dissipation is 42W, and it operates within a temperature range of -55°C to 150°C. This surface-mount component is RoHS compliant.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Vishay IRFR320TRPBF technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 3.1A |
| Drain to Source Resistance | 1.8R |
| Drain to Source Voltage (Vdss) | 400V |
| Drain-source On Resistance-Max | 1.8R |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 350pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 1.8R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFR320TRPBF Datasheet
Download the complete datasheet for Vishay IRFR320TRPBF to view detailed technical specifications.
No datasheet is available for this part.