N-Channel Power MOSFET, DPAK package, featuring a 400V drain-source voltage (Vdss) and 3.1A continuous drain current (ID). This silicon Metal-oxide Semiconductor FET offers a low drain-source on-resistance of 1.8 Ohms. With a threshold voltage of 4V and a gate-source voltage rating of 20V, it exhibits fast switching characteristics with turn-on delay of 10ns and fall time of 13ns. Maximum power dissipation is 42W, and it operates within a temperature range of -55°C to 150°C. This surface-mount component is RoHS compliant.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Vishay IRFR320TRPBF technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
3.1A
Drain to Source Resistance
1.8R
Drain to Source Voltage (Vdss)
400V
Drain-source On Resistance-Max
1.8R
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
350pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
1.8R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
30ns
Turn-On Delay Time
10ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFR320TRPBF Datasheet
Download the complete datasheet for Vishay IRFR320TRPBF to view detailed technical specifications.
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