N-Channel Power MOSFET, 400V Drain-Source Voltage (Vdss) and 3.1A Continuous Drain Current (ID). Features 1.8 Ohm Drain-Source On-Resistance (Rds On) and 42W Max Power Dissipation. This silicon Metal-oxide Semiconductor FET offers a 1-element configuration with fast switching characteristics, including 10ns turn-on delay and 13ns fall time. Packaged in a TO-252-3 surface-mount case, it operates from -55°C to 150°C.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFR320TRR technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
3.1A
Drain to Source Resistance
1.8R
Drain to Source Voltage (Vdss)
400V
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
350pF
Lead Free
Contains Lead
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
1.8R
RoHS Compliant
No
Turn-Off Delay Time
30ns
Turn-On Delay Time
10ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFR320TRR Datasheet
Download the complete datasheet for Vishay IRFR320TRR to view detailed technical specifications.
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