N-Channel Power MOSFET, 400V Drain-Source Voltage (Vdss) and 3.1A Continuous Drain Current (ID). Features 1.8 Ohm maximum drain-source on-resistance (Rds On) and 42W maximum power dissipation. This silicon Metal-oxide Semiconductor FET is housed in a TO-252-3 surface-mount package, offering fast switching with a 10ns turn-on delay and 30ns turn-off delay. Operates from -55°C to 150°C and is RoHS compliant.
PackageTO-252-3
Resistance1.8R
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFR320TRRPBF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 3.1A |
| Drain to Source Resistance | 1.8R |
| Drain to Source Voltage (Vdss) | 400V |
| Drain-source On Resistance-Max | 1.8R |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 350pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.8R |
| Resistance | 1.8R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFR320TRRPBF Datasheet
Download the complete datasheet for Vishay IRFR320TRRPBF to view detailed technical specifications.
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