Vishay
IRFR420A
Power Field-Effect Transistor, 3.3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
PackageTO-252-3
PolarityN-CHANNEL
Power83W
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Technical Specifications
Vishay IRFR420A technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
3.3A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
3R
Drain to Source Voltage (Vdss)
500V
Fall Time
13ns
Gate to Source Voltage (Vgs)
30V
Height
2.39mm
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
83W
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
83W
RoHS Compliant
No
Turn-Off Delay Time
16ns
Turn-On Delay Time
8.1ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFR420A Datasheet
Download the complete datasheet for Vishay IRFR420A to view detailed technical specifications.
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