N-Channel Power MOSFET, 500V Drain-Source Voltage, 3.3A Continuous Drain Current, and 3 Ohm Drain-Source Resistance. This silicon Metal-Oxide Semiconductor FET features a TO-252 package for surface mounting, with a maximum power dissipation of 83W and an operating temperature range of -55°C to 150°C. Key switching characteristics include an 8.1ns turn-on delay and a 13ns fall time. ROHS compliant and supplied on tape and reel.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFR420ATRLPBF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 3.3A |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.39mm |
| Input Capacitance | 340pF |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 3R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 8.1ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFR420ATRLPBF Datasheet
Download the complete datasheet for Vishay IRFR420ATRLPBF to view detailed technical specifications.
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