N-Channel Power MOSFET, 500V Drain-Source Voltage, 2.4A Continuous Drain Current, and 3 Ohm Drain-Source Resistance. Features include 8ns turn-on delay, 33ns turn-off delay, and 16ns fall time. This silicon Metal-Oxide-Semiconductor FET is housed in a TO-252-3 surface-mount package with dimensions of 6.73mm length, 6.22mm width, and 2.39mm height. Maximum power dissipation is 42W, with an operating temperature range of -55°C to 150°C.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRFR420TRL technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
2.4A
Drain to Source Resistance
3R
Drain to Source Voltage (Vdss)
500V
Fall Time
16ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
360pF
Lead Free
Contains Lead
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
3R
RoHS Compliant
No
Turn-Off Delay Time
33ns
Turn-On Delay Time
8ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFR420TRL Datasheet
Download the complete datasheet for Vishay IRFR420TRL to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
