
N-Channel Power MOSFET, 500V Drain-Source Voltage, 2.4A Continuous Drain Current, and 3 Ohm Drain-Source Resistance. Features include 8ns turn-on delay, 33ns turn-off delay, and 16ns fall time. This silicon Metal-Oxide-Semiconductor FET is housed in a TO-252-3 surface-mount package with dimensions of 6.73mm length, 6.22mm width, and 2.39mm height. Maximum power dissipation is 42W, with an operating temperature range of -55°C to 150°C.
Vishay IRFR420TRL technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 2.4A |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 360pF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 3R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
| RoHS | Not Compliant |
Download the complete datasheet for Vishay IRFR420TRL to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
