Vishay
IRFR430A
Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFR430A technical specifications.
General
Continuous Drain Current (ID)
5A
Drain to Source Resistance
1.7R
Drain to Source Voltage (Vdss)
500V
Fall Time
16ns
Gate to Source Voltage (Vgs)
30V
Height
2.39mm
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
RoHS Compliant
No
Turn-Off Delay Time
17ns
Turn-On Delay Time
8.7ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFR430A Datasheet
Download the complete datasheet for Vishay IRFR430A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.