N-Channel Power MOSFET, 500V Drain-Source Voltage, 5A Continuous Drain Current, and 1.7 Ohm On-Resistance. This silicon Metal-oxide Semiconductor FET features a TO-252AA (DPAK-3) surface mount package. Key specifications include a 16ns fall time, 17ns turn-off delay, and 8.7ns turn-on delay. Maximum power dissipation is 110W, with operating temperatures ranging from -55°C to 150°C. This RoHS compliant component is supplied in tape and reel packaging.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFR430ATRLPBF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Resistance | 1.7R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.39mm |
| Input Capacitance | 490pF |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.7R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 8.7ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFR430ATRLPBF Datasheet
Download the complete datasheet for Vishay IRFR430ATRLPBF to view detailed technical specifications.
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