
N-Channel Power MOSFET, 500V Vdss, 5A Continuous Drain Current, 1.7Ω Drain-Source On-Resistance. Features a TO-252-3 package for surface mounting, with a maximum power dissipation of 110W and an operating temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 8.7ns and fall time of 16ns. This silicon Metal-oxide Semiconductor FET is RoHS compliant and supplied on tape and reel.
Vishay IRFR430ATRPBF technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Resistance | 1.7R |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 1.7R |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.39mm |
| Input Capacitance | 490pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.7R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 8.7ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay IRFR430ATRPBF to view detailed technical specifications.
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