N-Channel Power MOSFET, 500V Vdss, 5A Continuous Drain Current, 1.7Ω Drain-Source On-Resistance. Features a TO-252-3 package for surface mounting, with a maximum power dissipation of 110W and an operating temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 8.7ns and fall time of 16ns. This silicon Metal-oxide Semiconductor FET is RoHS compliant and supplied on tape and reel.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFR430ATRPBF technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
5A
Drain to Source Resistance
1.7R
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
1.7R
Fall Time
16ns
Gate to Source Voltage (Vgs)
30V
Height
2.39mm
Input Capacitance
490pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
1.7R
RoHS Compliant
Yes
Turn-Off Delay Time
17ns
Turn-On Delay Time
8.7ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFR430ATRPBF Datasheet
Download the complete datasheet for Vishay IRFR430ATRPBF to view detailed technical specifications.
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