P-channel enhancement mode power MOSFET in a 3-pin DPAK (TO-252) surface-mount package. Features a maximum drain-source voltage of 50V and a continuous drain current of 5.3A. Offers a low drain-source on-resistance of 500 mOhm at 10V gate-source voltage. Maximum power dissipation is 25W, with an operating temperature range of -55°C to 150°C.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Vishay IRFR9010 technical specifications.
General
Package Family Name
TO-252
Package/Case
DPAK
Package Description
Deca Watt Package
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.73(Max)
Package Width (mm)
6.22(Max)
Package Height (mm)
2.38(Max)
Package Weight (g)
0.3
Mounting
Surface Mount
Jedec
TO-252
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
50V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
5.3A
Maximum Drain Source Resistance
500@10VmOhm
Typical Gate Charge @ Vgs
6.1@10VnC
Typical Gate Charge @ 10V
6.1nC
Typical Input Capacitance @ Vds
240@25VpF
Maximum Power Dissipation
25000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
18612
EU RoHS
No
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Vishay IRFR9010 Datasheet
Download the complete datasheet for Vishay IRFR9010 to view detailed technical specifications.
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