P-channel power MOSFET featuring 60V drain-source voltage and 5.1A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.5-ohm drain-source on-resistance. Designed for surface mounting in a TO-252-3 package, it operates from -55°C to 150°C with a maximum power dissipation of 2.5W. Key switching characteristics include a 31ns fall time, 9.6ns turn-off delay, and 11ns turn-on delay, with an input capacitance of 270pF. This RoHS compliant component is supplied on tape and reel.
Vishay IRFR9014TRLPBF technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 5.1A |
| Drain to Source Resistance | 500mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 270pF |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 500mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 9.6ns |
| Turn-On Delay Time | 11ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay IRFR9014TRLPBF to view detailed technical specifications.
No datasheet is available for this part.