P-channel MOSFET, 50V drain-source voltage, 9.9A continuous drain current, and 280mΩ drain-source on-resistance. This silicon metal-oxide semiconductor FET features a TO-252-3 surface mount package, 42W maximum power dissipation, and operates from -55°C to 150°C. Key electrical characteristics include a 20V gate-source voltage, 490pF input capacitance, 8.2ns turn-on delay, and 25ns fall time. RoHS compliant and lead-free.
PackageTO-252-3
MountingSurface Mount
PolarityP-CHANNEL
Power42W
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Technical Specifications
Vishay IRFR9020TRLPBF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 9.9A |
| Drain to Source Resistance | 280mR |
| Drain to Source Voltage (Vdss) | 50V |
| Drain-source On Resistance-Max | 280MR |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 490pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 42W |
| Radiation Hardening | No |
| Rds On Max | 280mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 8.2ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFR9020TRLPBF Datasheet
Download the complete datasheet for Vishay IRFR9020TRLPBF to view detailed technical specifications.
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