P-channel MOSFET, surface mount DPAK package, offering 100V drain-source breakdown voltage and 3.1A continuous drain current. Features a low 1.2 ohm drain-source on-resistance and 2.5W power dissipation. Operates across a wide temperature range from -55°C to 150°C, with fast switching times including 10ns turn-on delay and 17ns fall time. This silicon metal-oxide semiconductor FET is RoHS compliant.
PackageDPAK
Current Rating-3.1A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFR9110PBF technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 3.1A |
| Current Rating | -3.1A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 1.2R |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 200pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 1.2R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | -100V |
| Weight | 0.050717oz |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFR9110PBF Datasheet
Download the complete datasheet for Vishay IRFR9110PBF to view detailed technical specifications.
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