Vishay
IRFR9110TR
Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
PackageTO-252-3
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRFR9110TR technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
3.1A
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
100V
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
200pF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Rds On Max
1.2R
RoHS Compliant
No
Turn-Off Delay Time
15ns
Turn-On Delay Time
10ns
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFR9110TR Datasheet
Download the complete datasheet for Vishay IRFR9110TR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
